K9K1G08U0A Datasheet, PDF (22/43 Pages) Samsung semiconductor – 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

K9K1G08Q0A K9K1G16Q0A
K9K1G08U0A K9K1G16U0A
Input Data Latch Cycle
CLE
Preliminary
FLASH MEMORY
tCLH
tCH
CE
ALE
tALS
tWC
WE
I/O0~7
tWP
tWH
tDS ^tDH
DIN 0
tWP
tDS ^tDH
DIN 1
tWP
tDS ^tDH
DIN 511
Serial access Cycle after Read(CLE=L, WE=H, ALE=L)
CE
RE
I/Ox
R/B
tRC
tREA
tREH
tREA
Dout
tRR
tRHZ*
Dout
tREA
tCHZ*
tOH
tRHZ*
tOH
Dout
NOTES : Transition is measured ±200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
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