K4H561638H Datasheet, PDF (24/24 Pages) Samsung semiconductor – 256Mb H-die DDR SDRAM Specification

K4H561638H
Only for Aisin-AW
Preliminary
Industrial DDR SDRAM
Voltage
(V)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
Typical
Low
3.4
6.9
10.3
13.6
16.9
19.6
22.3
24.7
26.9
29.0
30.6
31.8
32.8
33.5
34.0
34.3
34.5
34.8
35.1
35.4
35.6
35.8
36.1
36.3
36.5
36.7
36.8
Pulldown Current (mA)
Typical
High
3.8
7.6
11.4
15.1
18.7
22.1
25.0
28.2
31.3
34.1
36.9
39.5
42.0
44.4
46.6
48.6
50.5
52.2
53.9
55.0
56.1
57.1
57.7
58.2
58.7
59.2
59.6
Minimum
2.6
5.2
7.8
10.4
13.0
15.7
18.2
20.8
22.4
24.1
25.4
26.2
26.6
26.8
27.0
27.2
27.4
27.7
27.8
28.0
28.1
28.2
28.3
28.3
28.4
28.5
28.6
Maximum
5.0
9.9
14.6
19.2
23.6
28.0
32.2
35.8
39.5
43.2
46.7
50.0
53.1
56.1
58.7
61.4
63.5
65.6
67.7
69.8
71.6
73.3
74.9
76.4
77.7
78.8
79.7
Typical
Low
-3.5
-6.9
-10.3
-13.6
-16.9
-19.4
-21.5
-23.3
-24.8
-26.0
-27.1
-27.8
-28.3
-28.6
-28.7
-28.9
-28.9
-29.0
-29.2
-29.2
-29.3
-29.5
-29.5
-29.6
-29.7
-29.8
-29.9
pullup Current (mA)
Typical
High
-4.3
-8.2
-12.0
-15.7
-19.3
-22.9
-26.5
-30.1
-33.6
-37.1
-40.3
-43.1
-45.8
-48.4
-50.7
-52.9
-55.0
-56.8
-58.7
-60.0
-61.2
-62.4
-63.1
-63.8
-64.4
-65.1
-65.8
Minimum
-2.6
-5.2
-7.8
-10.4
-13.0
-15.7
-18.2
-20.4
-21.6
-21.9
-22.1
-22.2
-22.3
-22.4
-22.6
-22.7
-22.7
-22.8
-22.9
-22.9
-23.0
-23.0
-23.1
-23.2
-23.2
-23.3
-23.3
Maximum
-5.0
-9.9
-14.6
-19.2
-23.6
-28.0
-32.2
-35.8
-39.5
-43.2
-46.7
-50.0
-53.1
-56.1
-58.7
-61.4
-63.5
-65.6
-67.7
-69.8
-71.6
-73.3
-74.9
-76.4
-77.7
-78.8
-79.7
Table 9. Weak Driver Characteristics
Rev. 1.2 January 2006