K4H561638H Datasheet, PDF (23/24 Pages) Samsung semiconductor – 256Mb H-die DDR SDRAM Specification

K4H561638H
Only for Aisin-AW
Preliminary
Industrial DDR SDRAM
90
80
Maximum
70
60
Typical High
50
40
Typical Low
30
Minimum
20
10
0
0.0
1.0
2.0
Pullup Characteristics for Weak Output Driver
Vout(V)
0.0
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
1.0
2.0
Minumum
Typical Low
Typical High
Maximum
Pulldown Characteristics for Weak Output Driver
Vout(V)
Figure 4. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
Rev. 1.2 January 2006