K9W4G08U1M Datasheet, PDF (2/40 Pages) Samsung semiconductor – 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

K9W4G08U1M K9W4G16U1M
K9K2G08Q0M K9K2G16Q0M
K9K2G08U0M K9K2G16U0M
FLASH MEMORY
Document Title
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
Revision History
Revision No History
0.9
Pb-free Package is added.
K9K2G08U0M-FCB0,FIB0
K9K2G08Q0M-PCB0,PIB0
K9K2G08U0M-PCB0,PIB0
K9K2G16U0M-PCB0,PIB0
K9K2G16Q0M-PCB0,PIB0
K9W4G08U1M-PCB0,PIB0,ECB0,EIB0
K9W4G16U1M-PCB0,PIB0,ECB0,EIB0
1.0
Errata is added.(Front Page)-K9K2GXXQ0M
tWC tWP tWH tRC tREH tRP tREA tCEA
Specification 45 25 15 50 15 25 30 45
Relaxed value 80 60 20 80 20 60 60 75
1.1
1. The 3rd Byte ID after 90h ID read command is don’t cared.
The 5th Byte ID after 90h ID read command is deleted.
1.2
New package dimension is added.(K9W4GXXU1M-KXB0/EXB0)
1.3
1. Min valid block of K9W4GXXU1M-YCB0/YIB0 is changed .
- min. 4036 --> 4016
2. Note is added.
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
1.4
AC parameters are changed-K9K2GXXQ0M
tWC tWP tWH tRC tREH tRP tREA tCEA
Before 45 25 15 50 15 25 30 45
After 80 60 20 80 20 60 60 75
1.5
1. Added Addressing method for program operation
1.6
1. Add the Protrusion/Burr value in WSOP1 PKG Diagram.
1.7
1. PKG(TSOP1, WSOP1) Dimension Change
Draft Date Remark
Mar. 13.2003 Preliminary
Mar. 17.2003 Preliminary
Apr. 9. 2003 Preliminary
Apr. 15. 2003 Preliminary
Apr. 18. 2003 Preliminary
Aug. 5. 2003 Preliminary
Jan. 27. 2004
Apr. 24. 2004
May. 19. 2004
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
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