K9W4G08U1M Datasheet, PDF (1/40 Pages) Samsung semiconductor – 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

K9W4G08U1M K9W4G16U1M
K9K2G08Q0M K9K2G16Q0M
K9K2G08U0M K9K2G16U0M
Document Title
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No History
0.0
1. Initial issue
0.1
1. IOL(R/B) of 1.8V device is changed.
-min. Value: 7mA -->3mA
-typ. Value: 8mA -->4mA
0.2
1. 5th cycle of ID is changed
: 40h --> 44h
0.3
1. Add WSOP Package Dimensions.
0.4
1. Add two-K9K2GXXU0M-YCB0/YIB0 Stacked Package
0.5
1. Min valid block of K9W4GXXU1M-YCB0/YIB0 is changed .
- min. 4016 --> 4036
0.6
1. Each K9K2GXXX0M chip in the K9W4GXXU1M has Maximum 30
invalid blocks.
2. K9W4GXXU1M’s ID is changed
(Before)
Device 2nd Cycle 3rd cycle 4th Cycle 5th Cycle
K9W4G08U1M DCh
C3
15h
4Ch
K9W4G16U1M CCh
C3
55h
4Ch
(After)
Device 2nd Cycle 3rd cycle 4th Cycle 5th Cycle
K9W4G08U1M DAh
C1
15h
44h
K9W4G16U1M CAh
C1
55h
44h
0.7
1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36)
2. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 37)
0.8
1. The min. Vcc value 1.8V devices is changed.
K9K2GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V
Draft Date Remark
Aug. 30.2001 Advance
Nov. 5. 2001 Preliminary
Jan. 23. 2002 Preliminary
May. 29. 2002 Preliminary
Aug. 13. 2 002 Preliminary
Aug. 22. 2002 Preliminary
Nov. 07. 2002 Preliminary
Nov. 22. 2002 Preliminary
Mar. 6. 2003 Preliminary
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
1