K4D551638D Datasheet, PDF (2/18 Pages) Samsung semiconductor – 256Mbit GDDR SDRAM

K4D551638D-TC
Revision History
Revision 1.8 (October 6, 2003)
• Added Lead free package part number in the data sheet.
256M GDDR SDRAM
Revision 1.7 (August 5, 2003)
• Added K4D551638D-TC45 in the spec
Revision 1.6 (July 21, 2003)
• Removed K4D551638D-TC30 from the spec
• Added K4D551638D-TC2A in the spec
Revision 1.5 (July 14, 2003)
• Added K4D551638D-TC30 in the spec
Revision 1.4 (June 16, 2003)
• Changed tRCDRD of K4D551638D-TC33/36 from 4tCK to 5tCK
• Changed tRCDWR of K4D551638D-TC33/36 from 2tCK to 3tCK
Revision 1.3 (April 11, 2003)
• Added K4D551638D-TC60 in the spec.
• Changed AC/DC parameters’ value of K4D551638D-TC50.
• Refresh cycle period of K4D551638D-TC50/60 is 8K/64ms.
Revision 1.1 (March 21, 2003)
• Changed VDD and VDDQ spec from 2.5V+5% to 2.6V+0.1V for all the frequency
Revision 1.0 (February 27, 2003)
• Changed the CAS Latency (CL) of K4D551638D-TC40 from 3 to 4
• Defined DC spec.
Revision 0.0 (January 16, 2003) - Target Spec
• Defined Target Specification
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Rev 1.8 (Oct. 2003)