K4D551638D Datasheet, PDF (17/18 Pages) Samsung semiconductor – 256Mbit GDDR SDRAM

K4D551638D-TC
256M GDDR SDRAM
Simplified Timing @ BL=4
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
CK, CK
BA[1:0] _BAa
BAa
BAa
BAa
BAb BAa
BAb
A10/AP _RRa_a
ADDR
(A0~A9, _Ra
Ca
A11,A12)
WE
Ra
Rb
Ra
Rb
Ca
Cb
DQS
DQ
Da0 Da1 Da2 Da3
DM
COMMAND
ACTIVEA
WRITEA
tRCD
tRAS
tRC
Normal Write Burst
(@ BL=4)
Da0 Da1 Da2 Da3 Db0 Db1 Db2 Db3
PRECH
ACTIVEA
ACTIVEB WRITEA
WRITEB
tRP
tRRD
Multi Bank Interleaving Write Burst
(@ BL=4)
- 17 -
Rev 1.8 (Oct. 2003)