K4D551638D Datasheet, PDF (11/18 Pages) Samsung semiconductor – 256Mbit GDDR SDRAM

K4D551638D-TC
DC CHARACTERISTICS
Recommended operating conditions Unless Otherwise Noted, TA=0 to 65°C)
256M GDDR SDRAM
Parameter
Symbol
Test Condition
Version
Unit Note
-2A -33 -36 -40 -45 -50 -60
Operating Current
(One Bank Active)
ICC1
Burst Lenth=2 tRC ≥ tRC(min)
IOL=0mA, tCC= tCC(min)
TBD 230 220 210 200 145 125 mA 1
Precharge Standby Current
in Power-down mode
ICC2P
CKE ≤ VIL(max), tCC= tCC(min)
70
4
3 mA
Precharge Standby Current
in Non Power-down mode
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
TBD
100
90
80
70
30
25 mA
Active Standby Current
power-down mode
ICC3P CKE ≤ VIL(max), tCC= tCC(min) TBD 80
75
70
65
55
35 mA
Active Standby Current in
in Non Power-down mode
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
TBD
150
140
130
120
75
55 mA
Operating Current
( Burst Mode)
ICC4
tRC ≥ tRFC(min)tRC ≥ tRFC(min)
Page Burst, All Banks activated.
TBD
450
430
410
390
250
200 mA
Refresh Current
ICC5
tRC ≥ tRFC(min)
TBD 390 380 370 360 200 180 mA 2
Self Refresh Current
ICC6
CKE ≤ 0.2V
4
3
mA
Note : 1. Measured with outputs open.
2. Refresh period is 32ms for -TC2A/33/36/40/45 (4K/32ms)
Refresh period is 64ms for -TC50/60 (8K/64ms)
AC INPUT OPERATING CONDITIONS
Recommended operating conditions(Voltage referenced to VSS=0V, VDD=2.6V+ 0.1V, VDDQ=2.6V+ 0.1V ,TA=0 to 65°C)
Parameter
Input High (Logic 1) Voltage; DQ
Symbol
Min
Typ
VIH
VREF+0.35
-
Max
Unit
-
V
Input Low (Logic 0) Voltage; DQ
VIL
-
Clock Input Differential Voltage; CK and CK
VID
0.7
-
VREF-0.35
V
-
VDDQ+0.6
V
Clock Input Crossing Point Voltage; CK and CK
VIX
0.5*VDDQ-0.2
-
0.5*VDDQ+0.2
V
Note
1
2
Note : 1. VID is the magnitude of the difference between the input level on CK and the input level on CK
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same
3. For the K4D551638D-TC2A, VDD & VDDQ = 2.8V+0.1V.
4. For the K4D551638D-TC60, VDD & VDDQ = 2.5V+5%.
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Rev 1.8 (Oct. 2003)