M366S3354BTS Datasheet, PDF (16/22 Pages) Samsung semiconductor – SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC

256MB, 512MB, 1GB Unbuffered DIMM
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
REFER TO THE INDIVIDUAL COMPONENET, NOT THE WHOLE MODULE.
Parameter
Symbol
CLK cycle
time
CAS latency=3
tCC
CAS latency=2
CLK to valid
output delay
CAS latency=3
CAS latency=2
tSAC
Output data
hold time
CAS latency=3
CAS latency=2
tOH
CLK high pulse width
tCH
CLK low pulse width
tCL
Input setup time
tSS
Input hold time
tSH
CLK to output in Low-Z
tSLZ
CLK to output ^{CAS latency=3}
in Hi-Z
CAS latency=2
tSHZ
7A
Min
Max
7.5
1000
10
5.4
6
3
3
2.5
2.5
1.5
0.8
1
5.4
6
Notes : _{1. Parameters depend on programmed CAS latency.}
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
SDRAM
Unit
Note
ns
1
ns
1,2
ns
2
ns
3
ns
3
ns
3
ns
3
ns
2
ns
Rev. 1.1 February 2004