M366S3354BTS Datasheet, PDF (15/22 Pages) Samsung semiconductor – SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC

256MB, 512MB, 1GB Unbuffered DIMM
AC OPERATING TEST CONDITIONS (VDD = 3.3V ± 0.3V, TA = 0 to 70°C)
Parameter
AC input levels (Vih/Vil)
Input timing measurement reference level
Input rise and fall time
Output timing measurement reference level
Output load condition
Value
2.4/0.4
1.4
tr/tf = 1/1
1.4
See Fig. 2
3.3V
Output
870Ω
1200Ω
50pF
VOH (DC) = 2.4V, IOH = -2mA
VOL (DC) = 0.4V, IOL = 2mA
Output
SDRAM
Unit
V
V
ns
V
Z0 = 50Ω
Vtt = 1.4V
50Ω
50pF
(Fig. 1) DC output load circuit
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
(Fig. 2) AC output load circuit
Parameter
Symbol
Row active to row active delay
tRRD(min)
RAS to CAS delay
tRCD(min)
Row precharge time
tRP(min)
Row active time
tRAS(min)
tRAS(max)
Row cycle time
tRC(min)
Last data in to row precharge
tRDL(min)
Last data in to Active delay
tDAL(min)
Last data in to new col. address delay
tCDL(min)
Last data in to burst stop
tBDL(min)
Col. address to col. address delay
tCCD(min)
Number of valid output data
CAS latency=3
CAS latency=2
Version
7A
15
20
20
45
100
65
2
2 CLK + tRP
1
1
1
2
1
Unit
Note
ns
1
ns
1
ns
1
ns
1
us
ns
1
CLK
2
-
CLK
2
CLK
2
CLK
3
ea
4
Notes : 1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time
and then rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
Rev. 1.1 February 2004