M366S3354BTS Datasheet, PDF (14/22 Pages) Samsung semiconductor – SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC

256MB, 512MB, 1GB Unbuffered DIMM
DC CHARACTERISTICS
M374S2953BTS (128M x 72, 1GB Module)
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Parameter
Operating current
(One bank active)
Precharge standby current
in power-down mode
Precharge standby current
in non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Symbol
ICC1
ICC2P
ICC2PS
ICC2N
ICC2NS
ICC3P
ICC3PS
ICC3N
ICC3NS
Operating current
(Burst mode)
ICC4
Refresh current
ICC5
Self refresh current
ICC6
Notes : _{1. Measured with outputs open.}
2. Refresh period is 64ms.
Test Condition
Burst length = 1
tRC ≥ tRC(min)
IO = 0 mA
CKE ≤ VIL(max), tCC = 10ns
CKE & CLK ≤ VIL(max), tCC =∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC =∞
Input signals are stable
CKE ≤ VIL(max), tCC = 10ns
CKE & CLK ≤ VIL(max), tCC =∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC =∞
Input signals are stable
IO = 0 mA
Page burst
4Banks activated
tCCD = 2CLKs
tRC ≥ tRC(min)
CKE ≤ 0.2V
Version
7A
1,080
36
36
360
180
110
110
540
450
1,170
2,070
54
SDRAM
Unit
Note
mA
1
mA
mA
mA
mA
mA
mA
1
mA
2
mA
Rev. 1.1 February 2004