K4D553238F-JC Datasheet, PDF (16/17 Pages) Samsung semiconductor – 256Mbit GDDR SDRAM

K4D553238F-JC
256M GDDR SDRAM
K4D553238F-JC36
Frequency
Cas Latency tRC
275MHz ( 3.6ns )
4
16
250MHz ( 4.0ns )
3
13
200MHz ( 5.0ns )
3
12
tRFC
17
15
14
tRAS tRCDRD tRCDWR tRP
11
4
2
5
9
4
2
4
8
4
2
4
tRRD
3
3
3
tDAL Unit
9
tCK
7
tCK
7
tCK
K4D553238F-JC40
Frequency
Cas Latency tRC
250MHz ( 4.0ns )
3
13
200MHz ( 5.0ns )
3
12
tRFC
15
14
tRAS tRCDRD tRCDWR tRP
9
4
2
4
8
4
2
4
tRRD
3
3
tDAL Unit
7
tCK
7
tCK
K4D553238F-JC50
Frequency
Cas Latency tRC
200MHz ( 5.0ns )
3
12
tRFC
14
tRAS tRCDRD tRCDWR tRP
8
4
2
4
tRRD
3
tDAL Unit
7
tCK
Simplified Timing(2) @ BL=4
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
CK, CK
BA[1:0] _BAa
BAa
BAa
BAa
BAb BAa
BAb
A8/AP R_Ra_a
ADDR
(A0~A7, _Ra
Ca
A9,A10)
WE
Ra
Rb
Ra
Rb
Ca
Cb
DQS
DQ
Da0 Da1 Da2 Da3
DM
COMMAND
ACTIVEA
WRITEA
tRCD
tRAS
tRC
Normal Write Burst
(@ BL=4)
Da0 Da1 Da2 Da3 Db0 Db1 Db2 Db3
PRECH
ACTIVEA
ACTIVEB WRITEA
WRITEB
tRP
tRRD
Multi Bank Interleaving Write Burst
(@ BL=4)
- 16 -
Rev 1.0 (Mar. 2004)