K4D553238F-JC Datasheet, PDF (15/17 Pages) Samsung semiconductor – 256Mbit GDDR SDRAM

K4D553238F-JC
256M GDDR SDRAM
AC CHARACTERISTICS (I)
Parameter
Row cycle time
Refresh row cycle time
Row active time
RAS to CAS delay for Read
RAS to CAS delay for Write
Sym-
bol
tRC
tRFC
tRAS
tRCDRD
tRCDW
-2A
Min Max
16
-
17
-
11 100K
5
-
3
-
-33
Min Max
16
-
17
-
11 100K
5
-
3
-
-36
Min Max
16
-
17
-
11 100K
4
-
2
-
-40
Min Max
13
-
15
-
9 100K
4
-
2
-
Row precharge time
tRP
5
-
5
-
5
-
4
-
Row active to Row active
tRRD
3
-
3
-
3
-
3
-
Last data in to Row precharge
@Normal Precharge
tWR
4
-
4
-
4
-
3
-
Last data in to Row precharge
@Auto Precharge
tWR_A
4
-
4
-
4
-
3
-
Last data in to Read command
tCDLR
3
-
3
-
2
-
2
-
Col. address to Col. address
tCCD
1
-
1
-
1
-
1
-
Mode register set cycle time
tMRD
2
-
2
-
2
-
2
-
Auto precharge write recovery +
Precharge
tDAL
9
-
9
-
9
-
7
-
Exit self refresh to read command tXSR
200
-
200
-
200
-
200
-
Power down exit time
tPDEX
3tCK
+tIS
-
3tCK
+tIS
-
3tCK
+tIS
-
3tCK
+tIS
-
Refresh interval time
tREF
7.8
-
7.8
-
7.8
-
7.8
-
Note : 1. For normal write operation, even numbers of Din are to be written inside DRAM
-50
Unit Note
Min Max
12
- tCK
14
- tCK
8
100K tCK
4
- tCK
2
- tCK
4
- tCK
3
- tCK
3
- tCK 1
3
2
1
2
7
200
3tCK
+tIS
7.8
- tCK 1
- tCK 1
- tCK
- tCK
- tCK
- tCK
- ns
- us
(Unit : Number of Clock)
AC CHARACTERISTICS (II)
K4D553238F-JC2A
Frequency
Cas Latency tRC
350MHz ( 2.86ns )
4
16
300MHz ( 3.3ns )
4
16
275MHz ( 3.6ns )
4
16
250MHz ( 4.0ns )
3
13
200MHz ( 5.0ns )
3
12
tRFC
17
17
17
15
14
tRAS tRCDRD tRCDWR tRP
11
5
3
5
11
5
3
5
11
4
2
5
9
4
2
4
8
4
2
4
(Unit : Number of Clock)
tRRD
3
3
3
3
3
tDAL Unit
9
tCK
9
tCK
9
tCK
7
tCK
7
tCK
K4D553238F-JC33
Frequency
Cas Latency tRC
300MHz ( 3.3ns )
4
16
275MHz ( 3.6ns )
4
16
250MHz ( 4.0ns )
3
13
200MHz ( 5.0ns )
3
12
tRFC
17
17
15
14
tRAS tRCDRD tRCDWR tRP
11
5
3
5
11
4
2
5
9
4
2
4
8
4
2
4
tRRD
3
3
3
3
tDAL Unit
9
tCK
9
tCK
7
tCK
7
tCK
- 15 -
Rev 1.0 (Mar. 2004)