K4D553238F-JC Datasheet, PDF (11/17 Pages) Samsung semiconductor – 256Mbit GDDR SDRAM

K4D553238F-JC
256M GDDR SDRAM
DC CHARACTERISTICS
Recommended operating conditions Unless Otherwise Noted, TA=0 to 65°C)
Parameter
Symbol
Test Condition
-2A
-33
Operating Current
(One Bank Active)
ICC1
Burst Lenth=2 tRC ≥ tRC(min)
IOL=0mA, tCC= tCC(min)
400 340
Precharge Standby Current
in Power-down mode
ICC2P
CKE ≤ VIL(max), tCC= tCC(min)
120
Precharge Standby Current
in Non Power-down mode
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
190
150
Active Standby Current
power-down mode
ICC3P CKE ≤ VIL(max), tCC= tCC(min)
170
130
Active Standby Current in
in Non Power-down mode
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
250
220
Operating Current
( Burst Mode)
ICC4
IOL=0mA ,tCC= tCC(min),
650 550
Page Burst, All Banks activated.
Refresh Current
ICC5
tRC ≥ tRFC(min)
470 415
Self Refresh Current
ICC6
CKE ≤ 0.2V
8
Operating Current
(4Bank interleaving)
ICC7
Burst Length=4 tRC ≥ tRC(min)
840
680
IOL=0mA, tCC= tCC(min)
Note : 1. Measured with outputs open.
2. Refresh period is 32ms.
Version
-36
-40
320 300
90
140 130
120
110
210 200
520 460
395 365
6
630 590
Unit Note
-50
280 mA 1
mA
120 mA
100 mA
190 mA
430 mA
335 mA 2
mA
550 mA
AC INPUT OPERATING CONDITIONS
Recommended operating conditions(Voltage referenced to VSS=0V, VDD=2.5V+ 5%, VDDQ=2.5V+ 5%,TA=0 to 65°C)
Parameter
Input High (Logic 1) Voltage; DQ
Input Low (Logic 0) Voltage; DQ
Clock Input Differential Voltage; CK and CK
Symbol
Min
Typ
VIH
VREF+0.35
-
VIL
-
-
VID
0.7
-
Max
-
VREF-0.35
VDDQ+0.6
Unit
V
V
V
Clock Input Crossing Point Voltage; CK and CK
VIX
0.5*VDDQ-0.2
-
0.5*VDDQ+0.2
V
Note
1
2
Note : 1. VID is the magnitude of the difference between the input level on CK and the input level on CK
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same
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Rev 1.0 (Mar. 2004)