K4H561638N-LCB3T00 Datasheet, PDF (15/24 Pages) Samsung semiconductor – N-die DDR SDRAM

K4H560438N
K4H560838N
K4H561638N
datasheet
Rev. 1.01
DDR SDRAM
18. Overshoot/Undershoot specification for Data, Strobe and Mask Pins
Parameter
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and V_DD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
DDR400
1.2 V
1.2 V
2.4 V-ns
2.4 V-ns
Specification
DDR333
1.2 V
1.2 V
2.4 V-ns
2.4 V-ns
DDR200/266
1.2 V
1.2 V
2.4 V-ns
2.4 V-ns
V_DDQOvershoot
5
4
Maximum Amplitude = 1.2V
3
2
Area
1
0
-1
-2
Maximum Amplitude = 1.2V
-3
GND
-4
-5
0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
Tims(ns)
undershoot
Figure 4. DQ/DM/DQS AC overshoot/Undershoot Definition
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