K4H561638N-LCB3T00 Datasheet, PDF (11/24 Pages) Samsung semiconductor – N-die DDR SDRAM

K4H560438N
K4H560838N
K4H561638N
datasheet
Rev. 1.01
DDR SDRAM
12. DDR SDRAM Spec Items & Test Conditions
Conditions
Operating current - One bank Active-Precharge;
tRC=tRCmin; tCK=10ns for DDR200, tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400;
DQ,DM and DQS inputs changing once per clock cycle;
address and control inputs changing once every two clock cycles.
Operating current - One bank operation ; One bank open, BL=4, Reads
- Refer to the following page for detailed test condition
Precharge power-down standby current; All banks idle; power - down mode;
CKE = <V_IL(max); tCK=10ns for DDR200,tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400;
V_IN = V_REF for DQ,DQS and DM.
Precharge Floating standby current; CS > =V_IH(min);All banks idle; CKE > = V_IH(min); tCK=10ns for DDR200,tCK=7.5ns for
DDR266, 6ns for DDR333, 5ns for DDR400; Address and other control inputs changing once per clock cycle; V_IN = V_REF for
DQ,DQS and DM
Precharge Quiet standby current; CS > = V_IH(min); All banks idle;
CKE > = V_IH(min); tCK=10ns for DDR200, tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400; Address and other control
inputs stable at >= V_IH(min) or =<V_IL(max); V_IN = V_REF for DQ ,DQS and DM
Active power - down standby current ; one bank active; power-down mode;
CKE=< V_IL (max); tCK=10ns for DDR200,tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400;
Vin = Vref for DQ,DQS and DM
Active standby current; CS >= V_IH(min); CKE>=V_IH(min);
one bank active; tRC=tRASmax; tCK=10ns for DDR200,tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400; DQ, DQS and
DM inputs changing twice per clock cycle; address and other control inputs changing once per clock cycle
Operating current - burst read; Burst length = 2; reads; continguous burst; One bank active; address and control inputs changing
once per clock cycle; CL=2 at tCK=10ns for DDR200, CL=2 at 7.5ns for DDR266, CL=2.5 at tCK=7.5ns for DDR266, tCK=6ns for
DDR333, CL=3 at tCK=5ns for DDR400; 50% of data changing on every transfer; lout = 0 m A
Operating current - burst write; Burst length = 2; writes; continuous burst;
One bank active address and control inputs changing once per clock cycle; CL=2 at tCK=10ns for DDR200, CL=2 at tCK=7.5ns
for DDR266, CL=2.5 at tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400; DQ, DM and DQS inputs changing twice per
clock cycle, 50% of input data changing at every burst
Auto refresh current; tRC = tRFC(min) which is 8*tCK for DDR200 at tCK=10ns; 10*tCK for DDR266 at tCK=7.5ns; 12*tCK for
DDR333 at tCK=6ns, 14*tCK for DDR400 at tCK=5ns; distributed refresh
Self refresh current; CKE =< 0.2V; External clock on; tCK=10ns for DDR200, tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for
DDR400.
Operating current - Four bank operation ; Four bank interleaving with BL=4
-Refer to the following page for detailed test condition
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
IDD7A
13. Input/Output Capacitance
( T_A= 25°C, f=100MHz)
Parameter
Symbol
Min
Max
DeltaCap(max)
Unit
NOTE
Input capacitance
(A0 ~ A12, BA0 ~ BA1, CKE, CS, RAS,CAS, WE)
C_IN1
2
3
0.5
pF
4
Input capacitance( CK, CK )
C_IN2
2
3
0.25
pF
4
Data & DQS input/output capacitance
Input capacitance(DM for x4/8, UDM/LDM for x16)
C_OUT
4
5
C_IN3
4
5
pF
1,2,3,4
0.5
pF
1,2,3,4
NOTE :
1.These values are guaranteed by design and are tested on a sample basis only.
2. Although DM is an input -only pin, the input capacitance of this pin must model the input capacitance of the DQ and DQS pins.
This is required to match signal propagation times of DQ, DQS, and DM in the system.
3. Unused pins are tied to ground.
4. This parameteer is sampled. V_DDQ = +2.5V +0.2V, V_DD = +2.5V+0.2V. For all devices, f=100MHz, tA=25°C, V_OUT(DC) = V_DDQ/2,
V_OUT(peak to peak) = 0.2V. DM inputs are grouped with I/O pins - reflecting the fact that they are matched in loading (to facilitate trace matching at the board level).
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