K4H561638N-LCB3T00 Datasheet, PDF (14/24 Pages) Samsung semiconductor – N-die DDR SDRAM

K4H560438N
K4H560838N
K4H561638N
datasheet
Rev. 1.01
DDR SDRAM
16. AC Operating Conditions
Parameter/Condition
Symbol
Min
Max
Input High (Logic 1) Voltage, DQ, DQS and DM signals
V_IH(AC)
V_REF + 0.31
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
V_IL(AC)
V_REF - 0.31
Input Differential Voltage, CK and CK inputs
V_ID(AC)
0.7
V_DDQ+0.6
Input Crossing Point Voltage, CK and CK inputs
V_IX(AC)
0.5*V_DDQ-0.2
0.5*V_DDQ+0.2
NOTE :
1. V_ID is the magnitude of the difference between the input level on CK and the input level on CK.
2. The value of V_IX is expected to equal 0.5*V_DDQ of the transmitting device and must track variations in the dc level of the same.
Unit
V
V
V
V
NOTE
1
2
17. AC Overshoot/Undershoot specification for Address and Control Pins
Parameter
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and V_DD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
DDR400
1.5 V
1.5 V
4.5 V-ns
4.5 V-ns
Specification
DDR333
1.5 V
1.5 V
4.5 V-ns
4.5 V-ns
DDR200/266
1.5 V
1.5 V
4.5 V-ns
4.5 V-ns
V_{DD Overshoot}
5
4
Maximum Amplitude = 1.5V
3
2
Area
1
0
-1
-2
Maximum Amplitude = 1.5V
-3
GND
-4
-5
0 0.6875 1.5 2.5 3.5 4.5 5.5 6.3125 7.0
0.5 1.0 2.0 3.0 4.0 5.0 6.0 6.5
Tims(ns)
undershoot
Figure 3. AC overshoot/Undershoot Definition
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