K4H560438E-GCCC Datasheet, PDF (14/18 Pages) Samsung semiconductor – 256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)

DDR SDRAM 256Mb E-die (x4, x8)
AC Timing Parameters and Specifications
Parameter
Symbol
Row cycle time
tRC
Refresh row cycle time
Row active time
RAS to CAS delay
tRFC
tRAS
tRCD
Row precharge time
Row active to Row active delay
Write recovery time
tRP
tRRD
tWR
Internal write to read command delay
Clock cycle time
CL=3.0
CL=2.5
tWTR
tCK
Clock high level width
Clock low level width
DQS-out access time from CK/CK
tCH
tCL
tDQSCK
Output data access time from CK/CK
Data strobe edge to ouput data edge
Read Preamble
tAC
tDQSQ
tRPRE
Read Postamble
CK to valid DQS-in
Write preamble setup time
tRPST
tDQSS
tWPRES
Write preamble
Write postamble
DQS falling edge to CK rising-setup time
tWPRE
tWPST
tDSS
DQS falling edge from CK rising-hold time
DQS-in high level width
tDSH
tDQSH
DQS-in low level width
Address and Control Input setup time
Address and Control Input hold time
tDQSL
tIS
tIH
Data-out high impedence time from CK/CK
tHZ
Data-out low impedence time from CK/CK
tLZ
Mode register set cycle time
DQ & DM setup time to DQS, slew rate 0.5V/ns
DQ & DM hold time to DQS, slew rate 0.5V/ns
tMRD
tDS
tDH
DQ & DM input pulse width
Control & Address input pulse width for each input
Refresh interval time
Up to 128Mb
256Mb, 512Mb, 1Gb
tDIPW
tIPW
tREFI
Output DQS valid window
tQH
Clock half period
tHP
- CC(DDR400@CL=3)
Min
Max
55
70
40
70K
15
15
10
15
2
5
10
6
12
0.45
0.55
0.45
0.55
-0.55
+0.55
-0.65
+0.65
-
0.4
0.9
1.1
0.4
0.6
0.72
1.28
0
0.25
0.4
0.6
0.2
0.2
0.35
0.35
0.6
0.6
-
tAC min
2
0.4
0.4
1.75
2.2
15.6
7.8
tHP
-tQHS
min
tCH/tCL
tAC max
tAC max
-
-
DDR SDRAM
- C4(DDR400@CL=3)
Min
Max
60
70
40
70K
18
18
10
15
2
5
10
6
12
0.45
0.55
0.45
0.55
-0.55
+0.55
-0.65
+0.65
-
0.4
0.9
1.1
0.4
0.6
0.72
1.28
0
0.25
0.4
0.6
0.2
0.2
0.35
0.35
0.6
0.6
-
tAC min
2
0.4
0.4
1.75
2.2
15.6
7.8
tHP
-tQHS
min
tCH/tCL
tAC max
tAC max
-
-
Unit
ns
ns
ns
ns
ns
ns
ns
tCK
ns
ns
tCK
tCK
ns
ns
ns
tCK
tCK
tCK
ps
tCK
tCK
tCK
tCK
tCK
tCK
ns
ns
ns
ns
tCK
ns
ns
ns
ns
us
us
ns
ns
Note
16
13
5
4
h,7~10
h,7~10
3
3
i, j
i, j
9
9
6
12
11, 12
Rev. 1.1 September. 2003