K4H560438E-GCCC Datasheet, PDF (12/18 Pages) Samsung semiconductor – 256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)

DDR SDRAM 256Mb E-die (x4, x8)
DDR SDRAM
AC Operating Conditions
Parameter/Condition
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
Input Differential Voltage, CK and /CK inputs
Input Crossing Point Voltage, CK and /CK inputs
Symbol
Min
Max-10
Unit
VIH(AC) VREF + 0.31
V
VIL(AC)
VREF - 0.31
V
VID(AC)
0.7
VDDQ+0.6
V
VIX(AC) 0.5*VDDQ-0.2 0.5*VDDQ+0.2
V
Note
1
2
Notes :
1. VID is the magnitude of the difference between the input level on CK and the input level on /CK.
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the dc level of the same.
AC Overshoot/Undershoot specification for Address and Control Pins
Parameter
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
Specification
DDR400
1.5V
1.5V
4.5V-ns
4.5V-ns
VDD
Overshoot
5
4
3
2
Area = 4.5V-ns
1
Maximum Amplitude = 1.5V
0
-1
-2
Maximum Amplitude = 1.5V
-3
GND
-4
-5
0 0.6875 1.5 2.5 3.5 4.5 5.5 6.3125 7.0
0.5 1.0 2.0 3.0 4.0 5.0 6.0 6.5
Tims(ns)
undershoot
AC overshoot/Undershoot Definition
Rev. 1.1 September. 2003