K4H560438E-GCCC Datasheet, PDF (13/18 Pages) Samsung semiconductor – 256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)

DDR SDRAM 256Mb E-die (x4, x8)
Overshoot/Undershoot specification for Data, Strobe, and Mask Pins
Parameter
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
DDR SDRAM
Specification
DDR400
1.2V
1.2V
2.5V-ns
2.5V-ns
VDDQ
Overshoot
5
4
Maximum Amplitude = 1.2V
3
2
Area = 2.4V-ns
1
0
-1
-2
Maximum Amplitude = 1.2V
-3
GND
-4
-5
0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
Tims(ns)
undershoot
DQ/DM/DQS AC overshoot/Undershoot Definition
Rev. 1.1 September. 2003