K4D64163HF Datasheet, PDF (14/16 Pages) Samsung semiconductor – 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM

K4D64163HF
64M DDR SDRAM
AC CHARACTERISTICS (I)
Parameter
Symbol
Row cycle time
Refresh row cycle time
Row active time
RAS to CAS delay
Row precharge time
Row active to Row active
Last data in to Row precharge
@Normal Precharge
Last data in to Row precharge
@Auto Precharge
Last data in to Read command
Col. address to Col. address
Mode register set cycle time
Auto precharge write recovery
+ Precharge
Exit self refresh to read com-
tRC
tRFC
tRAS
tRCD
tRP
tRRD
tWR
tWR_A
tCDLR
tCCD
tMRD
tDAL
tXSR
-33
Min Max
17
-
20
-
11 100K
6
-
6
-
2
-
3
-
3
-
2
-
1
-
3
-
9
-
200
-
-36
Min Max
16
-
18
-
10 100K
5
-
5
-
2
-
3
-
3
-
2
-
1
-
2
-
8
-
200
-
-40
Min Max
14
-
16
-
9
100K
5
-
5
-
2
-
3
-
3
-
2
-
1
-
2
-
8
-
200
-
-50
Min Max
12
-
14
-
8
100K
4
-
4
-
2
-
2
-
3
-
2
-
1
-
2
-
7
-
200
-
Power down exit time
Refresh interval time
tPDEX
2tCK
+tIS
-
2tCK
+tIS
-
1tCK
+tIS
-
1tCK
+tIS
-
tREF
15.6
15.6
-
15.6
-
15.6
-
Note : 1. For normal write operation, even numbers of Din are to be written inside DRAM
-60
Min Max
10
-
12
-
7
100K
3
-
3
-
2
-
2
-
3
-
2
-
1
-
2
-
6
-
200
-
1tCK
+tIS
-
15.6
-
Unit Note
tCK
tCK
tCK
tCK
tCK
tCK
tCK 1
tCK 1
tCK 1
tCK
tCK
tCK
tCK
ns
us
AC CHARACTERISTICS (II)
(Unit : Number of Clock)
K4D64163HF-TC33
Frequency
Cas Latency tRC
tRFC
tRAS
tRCD
tRP
tRRD
tDAL Unit
300MHz (3.0ns )
3
17
20
11
6
6
2
9
tCK
275MHz ( 3.6ns )
3
16
18
10
5
5
2
8
tCK
250MHz ( 4.0ns )
3
14
16
9
5
5
2
8
tCK
200MHz ( 5.0ns )
3
12
14
8
4
4
2
7
tCK
166MHz ( 6.0ns )
3
10
12
7
3
3
2
6
tCK
K4D64163HF-TC36
Frequency
Cas Latency tRC
tRFC
tRAS
tRCD
tRP
tRRD
tDAL Unit
275MHz (3.6ns )
3
16
18
10
5
5
2
8
tCK
250MHz ( 4.0ns )
3
14
16
9
5
5
2
8
tCK
200MHz ( 5.0ns )
3
12
14
8
4
4
2
7
tCK
166MHz ( 6.0ns )
3
10
12
7
3
3
2
6
tCK
K4D64163HF-TC40
Frequency
Cas Latency tRC
tRFC
tRAS
tRCD
tRP
tRRD
tDAL Unit
250MHz ( 4.0ns )
3
14
16
9
5
5
2
8
tCK
200MHz ( 5.0ns )
3
12
14
8
4
4
2
7
tCK
166MHz ( 6.0ns )
3
10
12
7
3
3
2
6
tCK
- 14 -
Rev. 1.1(Aug. 2002)