K4D64163HF Datasheet, PDF (11/16 Pages) Samsung semiconductor – 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM

K4D64163HF
64M DDR SDRAM
DC CHARACTERISTICS
Recommended operating conditions Unless Otherwise Noted, TA=0 to 65°C)
Parameter
Symbol
Test Condition
Version
-33
-36
-40
-50
Operating Current
(One Bank Active)
ICC1
Burst Lenth=2 tRC ≥ tRC(min)
IOL=0mA, tCC= tCC(min)
210
200
190
170
Precharge Standby Current
in Power-down mode
ICC2P
CKE ≤ VIL(max), tCC= tCC(min)
5
Precharge Standby Current
in Non Power-down mode
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
110
105
95
80
Active Standby Current
power-down mode
ICC3P CKE ≤ VIL(max), tCC= tCC(min)
110
105
95
80
Active Standby Current in
in Non Power-down mode
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
160
150
140
120
Operating Current
( Burst Mode)
ICC4
tRC ≥ tRFC(min)tRC ≥ tRFC(min)
390
Page Burst, All Banks activated.
370
350
320
Refresh Current
ICC5
tRC ≥ tRFC(min)
210
200
190
180
Self Refresh Current
ICC6
CKE ≤ 0.2V
2
Unit Note
-60
160 mA 1
mA
70 mA
70 mA
100 mA
300 mA
170 mA 2
mA
Note : 1. Measured with outputs open.
2. Refresh period is 64ms.
AC INPUT OPERATING CONDITIONS
Recommended operating conditions(Voltage referenced to VSS=0V, VDD=3.3V+ 5%, VDDQ=2.5V+ 5%,TA=0 to 65°C)
Parameter
Input High (Logic 1) Voltage; DQ
Symbol
Min
Typ
VIH
VREF+0.35
-
Max
-
Unit
V
Input Low (Logic 0) Voltage; DQ
VIL
-
-
VREF-0.35
V
Clock Input Differential Voltage; CK and CK
VID
0.7
-
VDDQ+0.6
V
Clock Input Crossing Point Voltage; CK and CK
VIX
0.5*VDDQ-0.2
-
0.5*VDDQ+0.2
V
Note
1
2
Note : 1. VID is the magnitude of the difference between the input level on CK and the input level on CK
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same
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Rev. 1.1(Aug. 2002)