K4H560438D-NC Datasheet, PDF (13/18 Pages) Samsung semiconductor – 256Mb sTSOPII

K4H560838D
DDR SDRAM
8M x 8Bit x 4 Banks Double Data Rate SDRAM
GENERAL DESCRIPTION
The K4H560838D is 268,435,456 bits of double data rate synchronous DRAM organized as 4 x 8,388,608 words by 8 bits, fabricated
with SAMSUNG′s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up
to 333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length
and programmable latencies allow the device to be useful for a variety of high performance memory system applications.
Absolute Maximum Rating
Parameter
Voltage on any pin relative to VSS
Voltage on VDD & VDDQ supply relative to VSS
Storage temperature
Power dissipation
Short circuit current
Symbol
VIN, VOUT
VDD, VDDQ
TSTG
PD
IOS
Value
-0.5 ~ 3.6
-1.0 ~ 3.6
-55 ~ +150
1.5
50
Unit
V
V
°C
W
mA
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability
DC Operating Conditions
Recommended operating conditions(Voltage referenced to VSS =0V, TA= 0 to 70°C)
Parameter
Symbol
Min
Supply voltage(for device with a nominal V D D of 2.5V)
VDD
2.3
Max
2.7
I/O Supply voltage
I/O Reference voltage
I/O Termination voltage(system)
Input logic high voltage
Input logic low voltage
VDDQ
VR E F
V_TT
V I H(DC)
VIL (DC)
2.3
2.7
VDDQ/2-50mV VDDQ/2+50mV
VREF-0.04
VREF+0.04
VREF+0.15
VD D Q + 0 . 3
-0.3
VREF-0.15
Input Voltage Level, CK and CK inputs
Input Differential Voltage, CK and CK inputs
Input crossing point voltage, CK and CK inputs
Input leakage current
V I N(DC)
V I D(DC)
V I X(DC)
II
-0.3
0.3
1.15
-2
VD D Q + 0 . 3
VD D Q + 0 . 6
1.35
2
Output leakage current
Output High Current(Normal strengh driver)
;V_OUT = V_TT + 0.84V
Output High Current(Normal strengh driver)
;V _OUT = V_TT - 0.84V
Output High Current(Half strengh driver)
;V_OUT = V_TT + 0.45V
Output High Current(Half strengh driver)
;V _OUT = V_TT - 0.45V
IO Z
-5
5
IO H
-16.8
IO L
16.8
IO H
-9
IO L
9
Unit
V
V
V
V
V
V
V
V
uA
uA
mA
mA
mA
mA
Note
1
2
4
4
3
5
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Rev.0.0 May. ’02