K4D553238F Datasheet, PDF (12/17 Pages) Samsung semiconductor – 256Mbit GDDR SDRAM

K4D553238F-GC
256M GDDR SDRAM
AC OPERATING TEST CONDITIONS (TA= 0 to 65°C)
Parameter
Value
Unit
Input reference voltage for CK(for single ended)
0.50*VDDQ
V
CK and CK signal maximum peak swing
1.5
V
CK signal minimum slew rate
1.0
V/ns
Input Levels(VIH/VIL)
VREF+0.4/VREF-0.4
V
Input timing measurement reference level
VREF
V
Output timing measurement reference level
Vtt
V
Output load condition
See Fig.1
Note 1 : In case of differential clocks(CK and CK ), input reference voltage for clock is a CK and CK’s crossing point.
Note
1
Vtt=0.5*VDDQ
Output
Z0=50Ω
CLOAD=30pF
RT=50Ω
VREF
=0.5*VDDQ
(Fig. 1) Output Load Circuit
CAPACITANCE (TA= 25°C, f=1MHz)
Parameter
Input capacitance( CK, CK )
Input capacitance(A0~A11, BA0~BA1)
Input capacitance
( CKE, CS, RAS,CAS, WE )
Data & DQS input/output capacitance(DQ0~DQ31)
Input capacitance(DM0 ~ DM3)
Symbol
CIN1
CIN2
CIN3
COUT
CIN4
Min
1.0
1.0
1.0
1.0
1.0
Max
5.0
4.0
4.0
6.5
6.5
Unit
pF
pF
pF
pF
pF
DECOUPLING CAPACITANCE GUIDE LINE
Recommended decoupling capacitance added to power line at board.
Parameter
Decoupling Capacitance between VDD and VSS
Decoupling Capacitance between VDDQ and VSSQ
Symbol
CDC1
CDC2
Note : 1. VDD and VDDQ pins are separated each other.
All VDD pins are connected in chip. All VDDQ pins are connected in chip.
2. VSS and VSSQ pins are separated each other
All VSS pins are connected in chip. All VSSQ pins are connected in chip.
- 12 -
Value
Unit
0.1 + 0.01
uF
0.1 + 0.01
uF
Rev 1.3 (Mar. 2005)