K4D553238F Datasheet, PDF (11/17 Pages) Samsung semiconductor – 256Mbit GDDR SDRAM

K4D553238F-GC
DC CHARACTERISTICS
Recommended operating conditions Unless Otherwise Noted, TA=0 to 65°C)
Parameter
Symbol
Test Condition
-2A
Operating Current
(One Bank Active)
ICC1
Burst Lenth=2 tRC ≥ tRC(min)
IOL=0mA, tCC= tCC(min)
340
Precharge Standby Current
in Power-down mode
ICC2P
CKE ≤ VIL(max), tCC= tCC(min)
15
Precharge Standby Current
in Non Power-down mode
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
75
Active Standby Current
power-down mode
ICC3P CKE ≤ VIL(max), tCC= tCC(min)
70
Active Standby Current
in Non Power-down mode
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
240
Operating Current
( Burst Mode)
ICC4
IOL=0mA ,tCC= tCC(min),
Page Burst, All Banks activated.
400
Refresh Current
ICC5
tRC ≥ tRFC(min)
380
Self Refresh Current
ICC6
CKE ≤ 0.2V
10
Operating Current
(4Bank interleaving)
ICC7
Burst Length=4 tRC ≥ tRC(min)
620
IOL=0mA, tCC= tCC(min)
Note : 1. Measured with outputs open.
2. Refresh period is 32ms.
256M GDDR SDRAM
Version
-33
310
15
70
65
220
370
340
10
560
Unit Note
-36
290
mA
15
mA
65
mA
60
mA
210
mA
360
mA
320
mA 1
10
mA
530
mA
AC INPUT OPERATING CONDITIONS
Recommended operating conditions(Voltage referenced to VSS=0V, TA=0 to 65°C)
Parameter
Input High (Logic 1) Voltage ;DQ
Symbol
Min
Typ
VIH
VREF+0.35
-
Max
Unit Note
-
V
Input Low (Logic 0) Voltage; DQ
VIL
-
Clock Input Differential Voltage; CK and CK
VID
0.7
-
VREF-0.35
V
-
VDDQ+0.6
V
1
Clock Input Crossing Point Voltage; CK and CK
VIX
0.5*VDDQ-0.2
-
0.5*VDDQ+0.2
V
2
Note : 1. VID is the magnitude of the difference between the input level on CK and the input level on CK
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same
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Rev 1.3 (Mar. 2005)