K4D263238M Datasheet, PDF (12/19 Pages) Samsung semiconductor – 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL

K4D263238M
128M DDR SDRAM
DC CHARACTERISTICS
Recommended operating conditions Unless Otherwise Noted, TA=0 to 65°C)
Parameter
Sym-
bol
Test Condition
-45*
Operating Current
(One Bank Active)
ICC1
Burst Lenth=2 tRC ≥ tRC(min)
IOL=0mA, tCC= tCC(min)
310
Precharge Standby Current
in Power-down mode
ICC2P
CKE ≤ VIL(max), tCC= tCC(min)
90
Precharge Standby Current
in Non Power-down mode
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min).
155
Active Standby Current
power-down mode
ICC3P CKE ≤ VIL(max), tCC= tCC(min)
105
Active Standby Current in
in Non Power-down mode
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min) .
190
Operating Current
( Burst Mode)
Refresh Current
Self Refresh Current
ICC4
IOL=0mA ,tCC= tCC(min), Page
Burst, All Banks activated.
660
ICC5
tRC ≥ tRFC(min)
380
ICC6
CKE ≤ 0.2V
5
Note: 1. Measured with outputs open.
2. Refresh period is 32ms.
Version
-50 -55
260 260
80
135 130
95
160 150
550 500
330 320
4
Unit Note
-60
260 mA 1
mA
125 mA
mA
140 mA
460 mA
320 mA 2
mA
AC INPUT OPERATING CONDITIONS
Recommended operating conditions(Voltage referenced to VSS=0V, VDD/ VDDQ=2.5V+ 5%, TA=0 to 65°C)
Parameter
Input High (Logic 1) Voltage; DQ
Symbol
VIH
Min
VREF+0.35
Typ
-
Max
-
Unit
V
Note
Input Low (Logic 0) Voltage; DQ
VIL
-
-
VREF-0.35
V
Clock Input Differential Voltage; CK and CK
VID
0.7
-
VDDQ+0.6
V
1
Clock Input Crossing Point Voltage; CK and CK
VIX
0.5*VDDQ-0.2
-
0.5*VDDQ+0.2
V
2
Note : 1. VID is the magnitude of the difference between the input level on CK and the input level on CK
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same
- 12 -
Rev. 1.3 (Aug. 2001)