DS_K7N323601M Datasheet, PDF (11/24 Pages) Samsung semiconductor – 1Mx36 & 2Mx18-Bit Pipelined NtRAM

K7N323601M
K7N321801M
1Mx36 & 2Mx18 Pipelined NtRAM^TM
ASYNCHRONOUS TRUTH TABLE
OPERATION
Sleep Mode
Read
Write
Deselected
ZZ OE I/O STATUS
H
X
High-Z
L
L
DQ
L
H
High-Z
L
X Din, High-Z
L
X
High-Z
Notes
1. X means "Don′t Care".
2. Sleep Mode means power Sleep Mode of which stand-by current does
not depend on cycle time.
3. Deselected means power Sleep Mode of which stand-by current
depends on cycle time.
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
SYMBOL
RATING
UNIT
Voltage on VDD Supply Relative to VSS
VDD
-0.3 to 4.6
V
Voltage on Any Other Pin Relative to VSS
VIN
-0.3 to VDD+0.3
V
Power Dissipation
PD
1.6
W
Storage Temperature
TSTG
-65 to 150
°C
Operating Temperature
T OPR
0 to 70
°C
Storage Temperature Range Under Bias
TBIAS
-10 to 85
°C
*Note : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING CONDITIONS at 3.3V I/O(0°C ≤ TA ≤ 70°C)
PARAMETER
SYMBOL
MIN
Typ.
Supply Voltage
VDD
3.135
3.3
VDDQ
3.135
3.3
Ground
VSS
0
0
OPERATING CONDITIONS at 2.5V I/O(0°C ≤ TA ≤ 70°C)
PARAMETER
SYMBOL
MIN
Typ.
Supply Voltage
VDD
3.135
3.3
VDDQ
2.375
2.5
Ground
VSS
0
0
MAX
3.465
3.465
0
UNIT
V
V
V
MAX
3.465
2.9
0
UNIT
V
V
V
CAPACITANCE*(TA=25°C, f=1MHz)
Parameter
Symbol
Input Capacitance
CIN
Output Capacitance
C OUT
*Notes : Sampled not 100% tested.
Test Condition
VIN=0V
VOUT =0V
TYP
-
-
- 11 -
Max
5
7
Unit
pF
pF
Nov. 2003
Rev 2.0