DS_K7N323601M Datasheet, PDF (1/24 Pages) Samsung semiconductor – 1Mx36 & 2Mx18-Bit Pipelined NtRAM

K7N323601M
K7N321801M
1Mx36 & 2Mx18 Pipelined NtRAM^TM
Document Title
1Mx36 & 2Mx18-Bit Pipelined NtRAM ^TM
Revision History
Rev. No.
History
0.0
1. Initial document.
0.1
1. Add 165FBGA package
0.2
1. Update JTAG scan order
2. Speed bin merge.
From K7N3236(18)09M to K7N3236(18)01M
3. AC parameter change.
tOH(min)/tLZC(min) from 0.8 to 1.5 at -25
tOH(min)/tLZC(min) from 1.0 to 1.5 at -22
tOH(min)/tLZC(min) from 1.0 to 1.5 at -20
0.3
1. Change pin out for 165FBGA
- x18/x36 ; 11B => from A to NC , 2R ==> from NC to A
0.4
1. Insert pin at JTAG scan order of 165FBGA in connection with
pin out change
- x18/x36 ; insert Pin ID of 2R to BIT number of 69
0.5
1. Add Icc, Isb, Isb1 and Isb2 values.
1.0
1. Final datasheet release.
1.1
1. Change the Stand-by current (Isb)
Before After
Isb - 25 : 120 170
- 22 : 110 160
- 20 : 100 150
- 16 : 90 140
- 15 : 90 140
- 13 : 90 140
Isb1 : 90 110
Isb2 : 80 100
2.0
1. Delete the 119BGA package
2. Delete the 225MHz and 150MHz speed bin
Draft Date
Remark
May. 10. 2001
Aug. 29. 2001
Dec. 31. 2001
Preliminary
Preliminary
Preliminary
Feb. 14. 2002 Preliminary
Apr. 20. 2002 Preliminary
May. 10. 2002
Sep. 26. 2002
Oct. 17, 2003
Preliminary
Final
Final
Nov. 18, 2003 Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Nov. 2003
Rev 2.0