DS_K7N803645B Datasheet, PDF (10/18 Pages) Samsung semiconductor – 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM

K7N803645B
K7N801845B
256Kx36 & 512Kx18 Pipelined NtRAM^TM
DC ELECTRICAL CHARACTERISTICS(VDD=2.5V ±5%, TA=0°C to +70°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Input Leakage Current(except ZZ)
Output Leakage Current
Operating Current
Standby Current
IIL VDD=Max ; VIN=VSS to VDD
-2
IOL Output Disabled,
-2
Device Selected , IOUT=0mA
ICC
ZZ≤VIL , Cycle Time ≥ tCYC Min
-16
-
-13
-
Device deselected, IOUT=0mA,
ISB ZZ≤VIL, f=Max,
All Inputs≤0.2V or ≥ VDD-0.2V
-16
-
-13
-
Device deselected, IOUT=0mA, ZZ≤0.2V, f=0,
ISB1
-
All Inputs=fixed (VDD-0.2V or 0.2V)
Device deselected, IOUT=0mA, ZZ≥VDD-0.2V,
ISB2 _{f=Max, All Inputs≤VIL or ≥VIH}
-
Output Low Voltage
Output High Voltage
Input Low Voltage
Input High Voltage
VOL
VOH
VIL
VIH
IOL=1.0mA
IOH=-1.0mA
-
2.0
-0.3*
1.7
Notes : 1. The above parameters are also guaranteed at industrial temperature range.
2. Reference AC Operating Conditions and Characteristics for input and timing.
3. Data states are all zero.
4. In Case of I/O Pins, the Max. VIH=VDDQ+0.3V
MAX
+2
+2
330
270
130
110
100
60
0.4
-
0.7
VDD+0.3**
UNIT NOTES
µA
µA
mA 1,2
mA
mA
mA
V
V
V
V
3
VIH
VSS
VSS-0.8V
20% tCYC(MIN)
TEST CONDITIONS
(TA=0 to 70°C, VDD=2.5V ±5%, unless otherwise specified)
PARAMETER
Input Pulse Level
Input Rise and Fall Time(Measured at 20% to 80%)
Input and Output Timing Reference Levels
Output Load
* The above parameters are also guaranteed at industrial temperature range.
- 10 -
VALUE
0 to 2.5V
1.0V/ns
1.25V
See Fig. 1
Nov 2003
Rev 3.0