DS_K7M323625M Datasheet, PDF (10/18 Pages) Samsung semiconductor – 1Mx36 & 2Mx18 Flow-Through NtRAM

K7M323625M
K7M321825M
1Mx36 & 2Mx18 Flow-Through NtRAM^TM
DC ELECTRICAL CHARACTERISTICS (VDD=3.3V+0.165V/-0.165V, TA=0°C to +70°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
Input Leakage Current(except ZZ)
IIL
VDD=Max ; V IN=VSS to V DD
-2
+2
Output Leakage Current
IOL Output Disabled,
-2
+2
Operating Current
Device Selected, I OUT=0mA,
ICC
ZZ≤VIL , Cycle Time ≥ tCYC Min
-75
-
290
Device deselected, IOUT=0mA,
ISB ZZ≤VIL, f=Max,
-75
-
130
All Inputs ≤0.2V or ≥ VDD-0.2V
Standby Current
Device deselected, IOUT=0mA,
ISB1 ^{ZZ≤0.2V, f=0,}
All Inputs=fixed (VDD -0.2V or
-
110
UNIT NOTES
µA
µA
mA 1,2
mA
mA
Device deselected, IOUT=0mA,
ISB2 ZZ≥VDD-0.2V, f=Max, All
Inputs ≤VIL or ≥V IH
Output Low Voltage(3.3V I/O)
Output High Voltage(3.3V I/O)
VOL
VO H
IOL=8.0mA
IO H=-4.0mA
Output Low Voltage(2.5V I/O)
VOL IOL=1.0mA
Output High Voltage(2.5V I/O)
Input Low Voltage(3.3V I/O)
VO H
VIL
IO H=-1.0mA
Input High Voltage(3.3V I/O)
VI H
Input Low Voltage(2.5V I/O)
VIL
Input High Voltage(2.5V I/O)
VI H
Notes : 1. Reference AC Operating Conditions and Characteristics for input and timing.
2. Data states are all zero.
3. In Case of I/O Pins, the Max. VIH=V DDQ +0.3V.
-
100
mA
-
0.4
V
2.4
-
V
-
0.4
V
2.0
-
V
-0.3*
0.8
V
2.0 VDD+0.3** V
3
-0.3*
0.7
V
1.7 VDD+0.3** V
3
VIH
VSS
VSS-1.0V
20% tCYC (MIN)
TEST CONDITIONS
(VDD=3.3V+0.165V/-0.165V,VDDQ=3.3V+0.165/-0.165V or VDD=3.3V+0.165V/-0.165V,VDDQ=2.5V+0.4V/-0.125V, TA=0to70°C)
PARAMETER
VALUE
Input Pulse Level(for 3.3V I/O)
0 to 3.0V
Input Pulse Level(for 2.5V I/O)
0 to 2.5V
Input Rise and Fall Time(Measured at 20% to 80% for 3.3V I/O)
1.0V/ns
Input Rise and Fall Time(Measured at 20% to 80% for 2.5V I/O)
1.0V/ns
Input and Output Timing Reference Levels for 3.3V I/O
1.5V
Input and Output Timing Reference Levels for 2.5V I/O
VDDQ/2
Output Load
See Fig. 1
- 10 -
Nov. 2003
Rev 2.0