STB458D Datasheet, PDF (7/11 Pages) SamHop Microelectronics Corp. – Dual Enhancement Mode Field Effect Transistor (N and P Channel)

STB458D
P-Channel
80
64
VGS =-10V
48
32
16
VGS =-5V
VGS =-4.5V
VGS =-4V
VGS =-3.5V
VGS =-3V
0
0 0.5 1.0 1.5 2.0 2.5 3.0
-VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
36
30
24
V GS =-4.5V
18
12
V GS =-10V
6
1
1
16
32
48
64
80
-ID, Drain Current (A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.6
1.4
V DS =V G S
ID=-250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C )
Figure 5. Gate Threshold Variation
with Temperature
7
Ver 1.0
35
28
21
14
T j=125 C
7
25 C
-55 C
0
0 0.7 1.4 2.1 2.8 3.5 4.2
-VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
1.5
1.4
V G S =-4.5V
ID=-10A
1.3
1.2
1.1
V G S =-10V
1.0
ID=-12A
0
0 25 50 75 100 125 150
T j( C )
Tj, Junction Temperature ( C )
Figure 4. On-Resistance Variation with
Drain Current and Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C )
Figure 6. Breakdown Voltage Variation
with Temperature
Apr,23,2010
www.samhop.com.tw