STB458D Datasheet, PDF (2/11 Pages) SamHop Microelectronics Corp. – Dual Enhancement Mode Field Effect Transistor (N and P Channel)

STB458D
Ver 1.0
N-Channel ELECTRICAL CHARACTERISTICS (TC=25^°C unless otherwise noted⁾
Symbol Parameter
Conditions
Min ^Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS=0V , ID=250uA
VDS=32V , VGS=0V
VGS= ±20V , VDS=0V
40
V
1
A
±100 nA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
g_FS
Forward Transconductance
DYNAMIC CHARACTERISTICS ^c
CISS
COSS
CRSS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS ^c
tD(ON)
tr
tD(OFF)
tf
Turn-On DelayTime
Rise Time
Turn-Off DelayTime
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=15A
VGS=4.5V , ID=13A
VDS=10V , ID=15A
VDS=20V,VGS=0V
f=1.0MHz
VDD=20V
ID=1A
VGS=10V
RGEN=6 ohm
VDS=20V,ID=15A,VGS=10V
VDS=20V,ID=15A,VGS=4.5V
VDS=20V,ID=15A,
VGS=10V
1
1.9
3
V
8.5 10.5 m ohm
10.5 14 m ohm
65
S
1500
pF
250
pF
170
pF
25
ns
30
ns
65
ns
40
ns
25
nC
12.5
nC
2.6
nC
7
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=6A
0.8 1.3
V
Apr,23,2010
2
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