STB458D Datasheet, PDF (5/11 Pages) SamHop Microelectronics Corp. – Dual Enhancement Mode Field Effect Transistor (N and P Channel)

STB458D
30
ID=15A
25
20
125 C
15
10
75 C
5
25 C
0
0
2
4
6
8
10
VGS, Gate-Source Voltage (V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
2400
2000
Ciss
1600
1200
800
Coss
400
Crss
0
0
5
10 15
20 25 30
VDS, Drain-to Source Voltage (V)
Figure 9. Capacitance
60
125 C
25 C
10
Ver 1.0
75 C
1
0 0.3 0.6 0.9 1.2 1.5
VSD, Body Diode Forward Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VDS =20V
8
ID=15A
6
4
2
0
0 4 8 12 16 20 24 28 32
Qg, Total Gate Charge (nC)
Figure 10. Gate Charge
300
100
10
TD(off )
Tf
Tr
TD(on)
VDS=20V,ID=1A
VGS=10V
1
1
10
100
Rg, Gate Resistance (Ω)
Figure 11. Switching Characteristics
5
1000
100
R ^{DS(ON) Limit}
10
1
0.1
0.1
VGS=10V
Single Pulse
TA=25 C
1
10us
100us
1ms
DC
10
40
VDS, Gate-Source Voltage (V)
Figure 12. Maximum Safe
Operating Area
Apr,23,2010
www.samhop.com.tw