STB458D Datasheet, PDF (3/11 Pages) SamHop Microelectronics Corp. – Dual Enhancement Mode Field Effect Transistor (N and P Channel)

STB458D
Ver 1.0
P-Channel ELECTRICAL CHARACTERISTICS (TC=25^°C unless otherwise noted⁾
4 _{Symbol Parameter}
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-40
V
IDSS
Zero Gate Voltage Drain Current
VDS=-32V , VGS=0V
-1 uA
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
±100 nA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
VDS=VGS , ID=-250uA
-1 -1.6 -3
V
RDS(ON) Drain-Source On-State Resistance
g_FS
Forward Transconductance
DYNAMIC CHARACTERISTICS ^c
VGS=-10V , ID=-12A
VGS=-4.5V , ID=-10A
VDS=-10V , ID=-12A
13.5 17 m ohm
18 24 m ohm
29
S
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS ^c
VDS=-20V,VGS=0V
f=1.0MHz
2480
pF
350
pF
260
pF
tD(ON)
tr
tD(OFF)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDD=-20V
ID=-1A
VGS=-10V
RGEN=3 ohm
39
ns
70
ns
320
ns
120
ns
Qg
Total Gate Charge
VDS=-20V,ID=-12A,VGS=-10V
61
nC
VDS=-20V,ID=-12A,VGS=-4.5V
31
nC
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=-20V,ID=-12A,
VGS=-10V
5
nC
17
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=-5A
-0.8 -1.2 V
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25^°C,L=0.5mH,VDD = 20V,VGS=10V.(See Figure13)
Apr,23,2010
3
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