STBP438S Datasheet, PDF (4/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for extremely low RDS(ON)

STB/P438S
30
ID=20A
25
20
15
125 C
10
5
75 C
25 C
0
0
2
4
6
8
10
VGS, Gate-Source Voltage (V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
1800
1500
C is s
1200
900
600
C oss
300
C rss
0
0
5 10 15 20 25 30
VDS, Drain-to Source Voltage (V)
Figure 9. Capacitance
Ver1.0
60
125 C
10
75 C
25 C
1
0 0.24 0.48 0.72 0.96 1.20
VSD, Body Diode Forward Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VDS =20V
8 ID=20A
6
4
2
0
0 4 8 12 16 20 24 28 32
Qg, Total Gate Charge (nC)
Figure 10. Gate Charge
300
100
10
TD(off )
Tf
Tr
TD(on)
VDS=20V,ID=1A
VGS=10V
1
1
10
100
Rg, Gate Resistance (Ω)
Figure 11. Switching Characteristics
4
400
100
10
V GS =10V
S ingle P ulse
1 ^{Tc=25 C}
0.1
1
10
100
VDS, Gate-Source Voltage (V)
Figure 12. Maximum Safe
Operating Area
Feb,05,2009
www.samhop.com.tw