STBP438S Datasheet, PDF (1/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for extremely low RDS(ON)

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Product
STB/P438S
Sa mHop Microelectronics C orp.
Ver1.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (mΩ) Max
9 @ VGS=10V
40V
60A
10 @ VGS=4.5V
FEATURES
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
D
G
S
S TB S E R IE S
T O -263(DD-P AK )
G
D
S
S TP S E R IE S
TO-220
ABSOLUTE MAXIMUM RATINGS (TC=25^°C unless otherwise noted⁾
Symbol
Parameter
Limit
V_DS
Drain-Source Voltage
40
V_GS
Gate-Source Voltage
±20
I_D
Drain Current-Continuous ^a
TA=25°C
60
TA=70°C
50
I_DM
-Pulsed ^b
240
E_AS
Avalanche Energy ^c
196
P_D
Maximum Power Dissipation ^a
TA=25°C
TA=70°C
70
45
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
THERMAL CHARACTERISTICS
R _JC
Thermal Resistance, Junction-to-Case
1.8
R _JA
Thermal Resistance, Junction-to-Ambient
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Feb,05,2009
1
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