STBP438S Datasheet, PDF (3/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for extremely low RDS(ON)

STB/P438S
100
VGS =10V
80
VGS =4V
VGS =3.5V
60
40
VGS =3V
20
0
0
0.5 1.0 1.5 2.0 2.5 3.0
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
18
15
12
V GS =4.5V
9
6
V GS =10V
3
0
1
20
40
60
80 100
ID, Drain Current (A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.4
V DS =V G S
1.2
ID=250uA
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C )
Figure 5. Gate Threshold Variation
with Temperature
3
35
28
21
T j=125 C
14
25 C
7
-55 C
0
0 0.7 1.4 2.1 2.8 3.5 4.2
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
Ver1.0
2.0
V G S =10V
1.8
ID=20A
1.6
1.4
V G S =4.5V
ID=12A
1.2
1.0
0
0 25 50 75 100 125 150
T j( C )
Tj, Junction Temperature ( C )
Figure 4. On-Resistance Variation with
Drain Current and Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C )
Figure 6. Breakdown Voltage Variation
with Temperature
Feb,05,2009
www.samhop.com.tw