STBP438S Datasheet, PDF (2/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for extremely low RDS(ON)

STB/P438S
Ver1.0
ELECTRICAL CHARACTERISTICS ⁽TC=25^°C unless otherwise noted⁾
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
40
IDSS
Zero Gate Voltage Drain Current
VDS=32V , VGS=0V
IGSS
Gate-Body leakage current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS ^a
VGS(th)
Gate Threshold Voltage
VDS=VGS , ID=250uA
1
RDS(ON)
g_FS
Drain-Source On-State Resistance
Forward Transconductance
VGS=10V , ID=20A
VGS=4.5V , ID=12A
VDS=10V , ID=20A
DYNAMIC CHARACTERISTICS ^b
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=20V,VGS=0V
f=1.0MHz
SWITCHING CHARACTERISTICS ^b
tD(ON)
Turn-On DelayTime
tr
Rise Time
tD(OFF)
Turn-Off DelayTime
tf
Fall Time
VDD=20V
ID=1A
VGS=10V
RGEN=6 ohm
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=20V,ID=20A,VGS=10V
VDS=20V,ID=20A,VGS=4.5V
VDS=20V,ID=20A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Diode Forward Voltage
VGS=0V,IS=2A
Notes
a.Pulse Test:Pulse Width <_ 300us, Duty Ctcle <_ 2%.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25^°C,VDD=40V, VGS =10V,L=0.5mH.(See Figure13)
Typ _{Max Units}
V
1
A
±100 nA
1.6
3
V
7
9 m ohm
8.5 10 m ohm
28.1
S
1360
pF
248.5
pF
143
pF
24
ns
25
ns
67
ns
32
ns
26
nC
12.5
nC
2.8
nC
6
nC
2
A
0.74 1.3
V
Feb,05,2009
2
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