SP632S Datasheet, PDF (4/6 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

SP632S
60
ID=5A
50
40
30
125 C
20
10
75 C
25 C
0
0
2
4
6
8
10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
3000
2500
Ciss
2000
1500
1000
500
Coss
Crss
0
0
5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Ver 1.1
20.0
125 C
10.0
5.0
75 C
25 C
1.0
0
0.3
0.6
0.9
1.2
1.5
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VDS=30V
8
ID=5A
6
4
2
0
0 5 10 15 20 25 30 35 40
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
1000
100
10
TD(off )
TD(on)
Tr
Tf
VDS=30V,ID=1A
VGS=10V
1
1
10
100
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
100
10
R ^{DS(ON) Limit}
1
10us
DC ^{11s001m0sm1sm1s00us}
VGS=10V
0.1 _{Single Pulse}
TA=25 C
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Jan,24,2014
4
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