SP632S Datasheet, PDF (1/6 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

Green
Product
SP632S
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.1
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (mΩ) Max
16 @ VGS=10V
60V
10A
24 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
PIN 1
56 78
DFN 5x6
12 34
ABSOLUTE MAXIMUM RATINGS (TA=25^°C unless otherwise noted⁾
Symbol Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
TC=25°C
I_D
Drain Current-Continuous ^{a d}
TC=100°C
TA=25°C
T_A=70°C
I_DM
-Pulsed ^d
E_AS
Single Pulse Avalanche Energy ^c
TC=25°C
P_D
Maximum Power Dissipation ^a
T_A=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R _JA
R _JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Details are subject to change without notice.
1
Limit
60
±20
42
26
10
8
35
156
54
3.1
2
-55 to 150
Units
V
V
A
A
A
A
A
mJ
W
W
W
°C
40
°C/W
2.3
°C/W
Jan,24,2014
www.samhop.com.tw