SP632S Datasheet, PDF (3/6 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

SP632S
70
V GS =10V
56
42
V GS =5V
V GS =4.5V
V GS =4V
28
V GS =3.5V
14
V GS =3V
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
48
40
32
24
V GS =4.5V
16
V GS =10V
8
0
1
14
28
42
56
70
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 1.1
30
24
18
Tj=125 C
12
-55 C
6
25 C
0
0 0.8 1.6 2.4 3.2 4.0 4.8
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.0
1.8
V G S =10V
ID=5A
1.6
1.4
1.2
V G S =4.5V
ID=4A
1.0
0
0 25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Jan,24,2014
3
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