SP632S Datasheet, PDF (2/6 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

SP632S
Ver 1.1
ELECTRICAL CHARACTERISTICS (TA=25^°C unless otherwise noted⁾
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
60
IDSS
Zero Gate Voltage Drain Current
VDS=48V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
VDS=VGS , ID=250uA
1
RDS(ON)
g_FS
Drain-Source On-State Resistance
Forward Transconductance
VGS=10V , ID=5A
VGS=4.5V , ID=4A
VDS=10V , ID=5A
DYNAMIC CHARACTERISTICS ^b
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=25V,VGS=0V
f=1.0MHz
SWITCHING CHARACTERISTICS ^b
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
VDD=30V
ID=1A
VGS=10V
RGEN= 6 ohm
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=30V,ID=5A,VGS=10V
VDS=30V,ID=5A,VGS=4.5V
VDS=30V,ID=5A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Surface Mounted on FR4 Board of 1 inch² , 1oz.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25^°C,L=0.5mH,VDD = 30V.(See Figure13)
d.Drain current limited by maximum junction temperature.
Typ Max Units
V
1
uA
±100 nA
1.5
3
V
13 16 m ohm
18
24 m ohm
15
S
2280
pF
144
pF
117
pF
37
ns
27
ns
99
ns
20
ns
32
nC
15.6
nC
3
nC
7.6
nC
0.75 1.2
V
Jan,24,2014
2
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