SDB65N03 Datasheet, PDF (4/5 Pages) SamHop Microelectronics Corp. – N-Channel Logic Level E nhancement Mode Field E ffect Transistor

S DP /B 65N03L
1.3
V DS =V G S
1.2
ID=250uA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0
25 50 75 100 125
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
50
40
30
20
V DS =10V
10
0
0
10
20
30
40
IDS , Drain-S ource C urrent (A)
F igure 7. T rans conductance V ariation
with Drain C urrent
1.15
ID=250uA
1.10
4
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
50
10
1.0
0.1
0.4 0.6 0.8 1.0 1.2
1.4
V S D, B ody Diode F orward V oltage (V )
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
10
V DS =10V
8
ID=65A
6
4
2
0
0 6 12 18 24 30 36 42 48
Qg, T otal G ate C harge (nC )
F igure 9. G ate C harge
4
300
200
100
R ^DS(ON)Limit
10
100
1ms ^s
D1C00m10sms
V GS =10V
S ingle P ulse
1
Tc=25 C
0.5
0.1
1
10 30 60
V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
O perating Area