SDB65N03 Datasheet, PDF (3/5 Pages) SamHop Microelectronics Corp. – N-Channel Logic Level E nhancement Mode Field E ffect Transistor

S DP /B 65N03L
E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)
4
P a ra meter
S ymbol Condition
Min Typ Max Unit
DRAIN-SOURCE DIODE CHARACTERISTICS ^a
Diode Forward Voltage
VSD VGS = 0V, Is =26A
0.9 1.3 V
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
80
V GS =10,9,8,7,6,5V
70
60
50
40
V GS =4V
30
20
10
V GS =3V
0
0 0.5 1.0 1.5 2.0 2.5 3.0
V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
3600
3000
2400
1800
C is s
1200
600
C oss
C rss
0
0
5
10 15
20
25 30
V DS , Drain-to S ource Voltage (V )
F igure 3. C apacitance
25
25 C
T J=125 C
20
15
-55 C
10
5
0
1
2
3
4
5
6
V G S , G ate-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
2.2
V G S =10V
1.8 ^ID=26A
1.4
1.0
0.6
0.2
0
-50 -25 0 25 50 75 100 125
T j( C )
F igure 4. On-R es is tance Variation with
Te mpe ra ture
3