SDB65N03 Datasheet, PDF (2/5 Pages) SamHop Microelectronics Corp. – N-Channel Logic Level E nhancement Mode Field E ffect Transistor

S DP /B 65N03L
E LE CTR ICAL CHAR ACTE R IS TICS (TC =25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min Typ^C Max Unit ₄
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
BVDSS ^VGS =0V, ^ID =250uA
30
V
Zero Gate Voltage Drain C urrent
IDSS
VDS =24V, VGS = 0V
10 uA
Gate-Body Leakage
ON CHARACTERISTICS ^a
IGSS
VGS ₌ 20V, VDS =0V
100 nA
Gate Threshold Voltage
VGS(th) VDS =VGS, ID = 250uA 1 1.5 3 V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS = 10V, ID = 26A
VGS = 4.5V, ID = 21A
8 9 m ohm
12 15 m ohm
On-S tate Drain Current
ID(ON)
VDS = 10V, VGS = 10V 65
A
Forward Transconductance
g_FS
VDS = 10V, ID = 26A
38
S
DYNAMIC CHARACTERISTICS ^b
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS ^b
VDS =15V, VGS = 0V
f =1.0MHZ
1350
PF
625
PF
190
PF
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
tD(ON)
VDD = 15V,
tr
ID = 1A,
VGS = 10V
tD(O F F )
R GEN = 6 ohm
tf
30
ns
32
ns
132
ns
30
ns
Total Gate C harge
Qg ^{VDS =10V, ID =65A,VGS =10V}
VDS =10V, ID =65A,VGS =4.5V
41 50 nC
20.5 24.5 nC
Gate-S ource Charge
Gate-Drain C harge
Qgs
VDS =10V, ID = 65A,
Qgd
VGS =10V
6.9
nC
5.8
nC
2