SDB65N03 Datasheet, PDF (1/5 Pages) SamHop Microelectronics Corp. – N-Channel Logic Level E nhancement Mode Field E ffect Transistor

S amHop Microelectronics C orp.
S DP /B 65N03L
S eptember , 2002
N-Channel Logic Level E nhancement Mode Field E ffect Transistor
4
P R ODUC T S UMMAR Y
F E AT UR E S
VDS S
30V
ID
R DS (on) ( m W ) T Y P
8 @ VGS = 10V
65A
12 @ VGS = 4.5V
S uper high dense cell design for extremely low R DS (ON).
High power and current handling capability.
TO-220 & TO-263 package.
D
GS
S DB S E R IE S
T O -263(DD-P AK )
G
D
S
S DP S E R IE S
TO-220
D
G
S
ABS OLUTE MAXIMUM R ATINGS (TC =25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
S ymbol
Limit
VDS
30
VGS
20
Drain C urrent-C ontinuous @ TJ=125 C
ID
65
a
-P ulsed
IDM
195
Drain-S ource Diode Forward C urrent
Maximum P ower Dissipation @ Tc=25 C
Derate above 25 C
Operating and S torage Temperature R ange
IS
PD
TJ, TSTG
65
75
0.5
-65 to 175
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
R JC
2
Thermal R esistance, Junction-to-Ambient
R JA
62.5
1
Unit
V
V
A
A
A
W
W/ C
C
C /W
C /W