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| SCT3120AL Datasheet, PDF (8/14 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCT3120AL
ï¬Electrical characteristic curves
Datasheet
Fig.12 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage
0.5
Ta = 25ºC
Pulsed
0.4
Fig.13 Static Drain - Source On - State
Resistance vs. Junction Temperature
0.5
VGS = 18V
Pulsed
0.4
0.3
ID = 14A
0.2
ID = 6.7A
0.1
0
6 8 10 12 14 16 18 20 22
Gate - Source Voltage : VGS [V]
0.3
0.2
ID = 14A
0.1
0
-50
ID = 6.7A
0
50 100 150 200
Junction Temperature : Tj [ºC]
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current
1
0.1
VGS = 18V
Pulsed
0.01
1
Ta = 150ºC
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = ï25ºC
10
100
Drain Current : ID [A]
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8/12
2017.08 - Rev.C
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