SCT3120AL Datasheet, PDF (10/14 Pages) Rohm – N-channel SiC power MOSFET

SCT3120AL
Electrical characteristic curves
Datasheet
Fig.19 Typical Switching Loss
vs. Drain - Source Voltage
100
90 ^Ta ^{= 25ºC}
I_D=6.7A
80
V_GS = 18V/0V
70
R_G=0
L=500H
60
50
40
E_on
30
20
10
E_off
0
100
200
300
400
500
Drain - Source Voltage : V_DS [V]
Fig.20 Typical Switching Loss
vs. Drain Current
200
T_a = 25ºC
V_DD=300V
V_GS = 18V/0V
150
R_G=0
L=500H
100
50
0
0
E_on
E_off
5
10
15
20
Drain Current : I_D [A]
Fig.21 Typical Switching Loss
vs. External Gate Resistance
200
T_a = 25ºC
V_DD=300V
150
I_D=6.7A
V_GS = 18V/0V
L=500H
100
E_on
50
0
0
E_off
5 10 15 20 25 30
External Gate Resistance : R_G []
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10/12
2017.08 - Rev.C