SCT3120AL Datasheet, PDF (4/14 Pages) Rohm – N-channel SiC power MOSFET

SCT3120AL
Datasheet
Body diode electrical characteristics (Source-Drain) (T_a = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Inverse diode continuous,
forward current
Inverse diode direct current,
pulsed
I_S ^*1
I_SM ^*2
T_c = 25°C
-
-
21
A
-
-
52
A
Forward voltage
V_SD ^{*3 V}_GS ^{= 0V, I}_S ^{= 6.7A}
-
3.2
-
V
Reverse recovery time
t_rr ^*3
-
13
-
ns
Reverse recovery charge
Q_rr ^*3
I_F = 6.7A, V_R = 300V
di/dt = 1100A/s
-
35
-
nC
Peak reverse recovery current
I_rrm ^*3
-
6
-
A
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2017.08 - Rev.C