SCT3120AL Datasheet, PDF (2/14 Pages) Rohm – N-channel SiC power MOSFET

SCT3120AL
Thermal resistance
Parameter
Thermal resistance, junction - case
Datasheet
Symbol
R_thJC
Values
Unit
Min. Typ. Max.
-
1.12 1.46 C/W
Electrical characteristics (T_a = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Drain - Source breakdown
voltage
V_(BR)DSS V_GS = 0V, I_D = 1mA
650
-
-
V
Zero gate voltage
drain current
V_DS = 650V, V_GS = 0V
I_DSS T_j = 25°C
-
T_j = 150°C
-
1
10
A
2
-
Gate - Source leakage current
I_GSS V_GS = 22V, V_DS = 0V
-
-
100 nA
Gate - Source leakage current
I_GSS V_GS = 4V, V_DS = 0V
-
-
100 nA
Gate threshold voltage
V_{GS (th)} V_DS = 10V, I_D = 3.33mA 2.7
-
5.6
V
Static drain - source
on - state resistance
V_GS = 18V, I_D = 6.7A
R_DS(on) ^{*3 T}_j ^{= 25°C}
T_j = 125°C
-
120 156 m
- 158.4 -
Gate input resistance
R_G f = 1MHz, open drain
-
18
-

Example of acceptable Vgs waveform
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2/12
2017.08 - Rev.C